• DocumentCode
    1658915
  • Title

    Fully depleted 30-V-class thin-film SOI power MOSFET

  • Author

    Matsumoto, Satoshi ; Yachi, Toshiaki

  • Author_Institution
    NTT Interdisciplinary Res. Labs., Tokyo, Japan
  • fYear
    1995
  • Firstpage
    979
  • Lastpage
    982
  • Abstract
    A fully depleted 30-V-class thin-film SOI power MOSFET has been fabricated by the 1.0-μm-rule CMOS/SOI process using a SIMOX substrate. Its electrical characteristics were successfully demonstrated and the impact of the buried oxide thickness on the various electrical characteristics were discussed based on experimental and numerical results. The minimum specific on-resistance of the fabricated device was 66 mΩ·mm2 at a breakdown voltage of 32 V
  • Keywords
    MOSFET; SIMOX; buried layers; power MOSFET; 1 mum; 30 V; 32 V; CMOS/SOI process; SIMOX substrate; breakdown voltage; buried oxide thickness; drain current; electrical characteristics; fully depleted thin-film SOI power MOSFET; minimum specific on-resistance; numerical results; source-to-drain breakdown characteristics; subthreshold characteristics; Breakdown voltage; CMOS process; Electric variables; Fabrication; MOSFET circuits; Power MOSFET; Silicon on insulator technology; Substrates; Thin film devices; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499380
  • Filename
    499380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1658915