The fabrication and characterization of large scale integrated field emitter arrays for high current electron sources

Author

Urayama, Masao ; Tokumaru, Terutaka ; Takegawa, Yoshiyuki ; Morita, Yuko ; Maruo, Yuji ; Ide, Tetsuya ; Inoue, Yoshio ; Yano, Seiki

Author_Institution

Functional Devices Labs., Sharp Corp., Chiba, Japan

fYear

1995

Firstpage

1007

Lastpage

1010

Abstract

We report on the fabrication and the characteristics of large scale integrated field emitter arrays (FEAs) containing six million emitters. Our FEAs have a unique structure having a thermal-oxidized SiO ₂ film as an insulator layer which separates the gate electrodes from the silicon cathode substrate. An anode current of 63.8 mA at 58.7 V has been obtained in the six million field emitters. This is one of the highest values reported in the world to date. From the FEA characteristics we have estimated a variation of the radius of curvature of the emitter tips. This variation has been found to be within 6.4 nm ±1.05 nm

Keywords

electron field emission; electron sources; silicon; vacuum microelectronics; 58.7 V; 63.8 mA; Si; Si cathode substrate; SiO₂ insulator layer; SiO₂-Si; characterization; fabrication; field emitter arrays; high current electron sources; large scale integrated arrays; thermal-oxidized SiO₂ film; Anodes; Cathodes; Electrodes; Fabrication; Field emitter arrays; Insulation; Large scale integration; Semiconductor films; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499387

Filename

499387