DocumentCode
1659174
Title
Suppression of Er optical de-activation using silicon-rich silicon nitride
Author
Yang, Moon-Seung ; Kim, Kyung Joong ; Shin, Jung H.
Author_Institution
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Daejeon
fYear
2007
Firstpage
1
Lastpage
3
Abstract
The effect of nitride passivation on the Si nanocluster -Er coupling and Er optical activity is investigated. Based on a comparison with Er doped Si-rich Si oxide (SRSO), breaking of nc-Si/Er coupling and Er de-activation in Si-rich Si nitride (SRSN) are strongly reduced.
Keywords
elemental semiconductors; erbium; nanostructured materials; nitridation; optical rotation; passivation; silicon; silicon compounds; Si; SiN:Er; nanocluster; nitride passivation effect; optical de-activation; silicon-rich silicon nitride; Annealing; Erbium; Luminescence; Optical films; Optical sensors; Particle beam optics; Semiconductor films; Silicon; Stimulated emission; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347674
Filename
4347674
Link To Document