DocumentCode
1659200
Title
Effect of ion-irradiation induced defect on the optically active Er ions in Er-doped silicon-rich silicon oxide
Author
Jeong, Hoon ; Seo, Se-Young ; Shin, Jung H.
Author_Institution
Dept. of Phys., Korea Adanced Inst. of Sci. & Technol., Daejeon
fYear
2007
Firstpage
1
Lastpage
3
Abstract
We found that the initial presence of defects induced by ion-irradiation reduces the fraction of Er ions that can be excited via nanocluster silicon (nc-Si) even after their removal via high-temperature annealing.
Keywords
annealing; erbium; ion beam effects; nanostructured materials; silicon; silicon compounds; thin films; Er-doped silicon oxide; SRSO film; SiO:Er,Si; high-temperature annealing; ion-irradiation induced defect; nanocluster silicon; optically active Er ions; silicon-rich silicon oxide; Amorphous materials; Annealing; Atomic layer deposition; Erbium; Luminescence; Optical films; Optical sensors; Particle beam optics; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Group IV Photonics, 2007 4th IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
978-1-4244-0934-1
Type
conf
DOI
10.1109/GROUP4.2007.4347675
Filename
4347675
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