Effects of technological and geometrical parameters of a tri-gate MOSFET fabricated in a bulk technology

Author

Ramadout, B. ; Lu, G.-N. ; Carrère, J.P. ; Pinzelli, L. ; Perrot, C. ; Rivoire, M. ; Nemouchi, F.

Author_Institution

STMicroelectronics, Crolles, France

fYear

2010

Firstpage

175

Lastpage

176

Abstract

We have investigated, by TCAD simulations, a tri-gate MOSFET fabricated in a bulk CMOS technology. By biasing both lateral-gates with the same voltage, this device is operated as a surface-gate transistor and a lateral one in parallel connection. We observe two different thresholds and a non-standard behavior of the lateral MOS due to source-drain doping profiles. This proposed device with multi-gate controllability may find many analog and digital applications. With the use of a mobility model, simulated results are compared with measured characteristics of the device. Effects of technological and geometrical parameters are identified and evaluated to allow performance optimization.

Keywords

CAD; CMOS logic circuits; MOSFET; doping profiles; TCAD simulations; bulk CMOS technology; geometrical parameters; lateral-gates; mobility model; multigate controllability; source-drain doping profiles; surface-gate transistor; technological parameters; trigate MOSFET; CMOS image sensors; CMOS technology; Controllability; Doping; Etching; Isolation technology; MOSFET circuits; Semiconductor process modeling; Surface fitting; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424610

Filename

5424610