• DocumentCode
    1659380
  • Title

    Enhanced Hole Mobility in p-type ??-FeSi2 Films Grown by Molecular Beam Epitaxy Using High-Purity Fe Source

  • Author

    Suzuno, M. ; Ugajin, Y. ; Murase, S. ; Suemasu, T.

  • Author_Institution
    Inst. of Appl. Phys., Tsukuba Univ., Tsukuba
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The hole mobilities increased and hole densities decreased by one order of magnitude in intentionally undoped p-type beta-FeSi2 films formed with high-purity 5N-Fe source. The measured mobilities were reproduced well by considering several scattering mechanisms.
  • Keywords
    hole mobility; iron compounds; molecular beam epitaxial growth; thin films; FeSi2; carrier scattering mechanisms; enhanced hole mobility; high-purity 5N-Fe source; hole densities; molecular beam epitaxy; undoped p-type films; Annealing; Charge carrier density; Conductivity; Impurities; Indium tin oxide; Iron; Molecular beam epitaxial growth; Optical films; Optical scattering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2007 4th IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    978-1-4244-0934-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2007.4347680
  • Filename
    4347680
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1659380