Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO2 gate insulator

Author

Xu, Honghua ; Liu, Xiaoyan ; Du, Gang ; He, Yuhui ; Fan, Chun ; Han, Ruqi ; Kang, Jinfeng

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China

fYear

2010

Firstpage

179

Lastpage

180

Abstract

We calculate valence band structures and transport property of HfO₂ gate dielectric surrounded Ge (110) nanowire with a radial force at the boundary of the insulator. The radial force pushes the valence subbands downwards. Most of hole effective masses of top five subbands decrease and densities of states´ peaks move down as the force increases. The hole mobility in Ge (110) NW significantly increases with higher force values.

Keywords

effective mass; electronic density of states; elemental semiconductors; germanium; hafnium compounds; hole mobility; insulated gate field effect transistors; nanowires; semiconductor quantum wires; valence bands; (110) nanowire; Ge-HfO₂; boundary radial force; density of state; gate dielectrics; gate insulator; gate-all-around (110) NW FETs; hole effective mass; hole mobility; transport property; valence band structures; valence subbands; Capacitive sensors; Dielectrics and electrical insulation; Effective mass; Electrodes; FETs; Hafnium oxide; High-K gate dielectrics; Lattices; Nanoscale devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424613

Filename

5424613