DocumentCode
1659550
Title
Effects of os inserted layers on the structures and magnetic properties of the FePt film
Author
Chen, Shih-Yuan ; Yao, Yeong-Der ; Wu, Jenn-Ming ; Yu, Chin-Chung
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear
2010
Firstpage
692
Lastpage
693
Abstract
Spacer layer effect on multi-layer [FePt/Os]n films has been investigated from the variation of magnetic properties and microstructure of the films. From a HRTEM cross-section view observation, the Osmium (Os) underlayer and space layers can effectively prevent the diffusion of Si atoms and the intermixing between FePt layers induced by annealing process, respectively, even annealing temperature higher than 700°C. Selected area diffraction pattern indicated that the structure of Os spacer layer was amorphous. The average grain size of the multilayer films can be well controlled by both annealing temperature and thickness of the FePt layers. The average grain size of [(FePt)x/Os]n films is roughly 18 nm for x = 20 nm, n = 5, that is smaller than the average grain size of single layer FePt films (70 nm). The multilayer [(FePt)x/Os]n films with Os as the spacer exhibit good hard magnetic properties and are attractive candidates for ultrahigh density magnetic recording media.
Keywords
annealing; diffusion; grain size; iron alloys; magnetic hysteresis; magnetic multilayers; magnetic recording; magnetic thin films; osmium; platinum alloys; silicon; transmission electron microscopy; FePt-Os; HRTEM cross-section view observation; Si; amorphous layer; annealing process; diffusion; grain size; hysteresis loops; inserted layers; intermixing; microstructure; multilayer films; selected area diffraction pattern; size 70 nm; spacer layer effect; ultrahigh density magnetic recording media; underlayer; Amorphous materials; Annealing; Atomic layer deposition; Diffraction; Grain size; Magnetic films; Magnetic properties; Microstructure; Nonhomogeneous media; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424617
Filename
5424617
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