Strategic Considerations for Unipolar SiC Switch Options: JFET vs. MOSFET

This paper compares the two most prominent alternatives of an upcoming commercial SiC power switch: JFET vs. MOSFET. Besides the lower specific R_on achievable with a SiC-JFET according to today´s technological progress, also reliability and long term stability concerns give advantage to the JFET concept. The major drawback of the JFET, its normally on characteristic, can easily be overcome by a cascade configuration together with a fast low voltage power MOSFET. In some applications the self conducting characteristic is even beneficial.