DocumentCode
1663356
Title
Piezomagnetic properties and shielding properties of amorphous and nanocrystalline powders / butyl rubber composite films
Author
Xu XueJiao ; Zhu ZhengHou ; Song Hui ; Wan ZhenZhen ; Peng Huan ; Huan, Peng
Author_Institution
Dept. of Mater. Sci. & Eng., NanChang Univ., Nanchang, China
fYear
2010
Firstpage
384
Lastpage
385
Abstract
The composite films of amorphous and nanocrystalline Fe73.5Cu1Nb3Si13.5B9 powders/butyl rubber were prepared by pressing in the mold to shape. The piezomagnetic properties of composite films were studied in the temperature range of 20-50 Celsius degree with theshielding properties in the frequency band (30kHz-6000MHz) of electromagnetic wave. The results show that when the microstress below 0.09MPa and testing frequency below 200kHz, the piezomagnetic properties are the best and theirs piezomagnetic properties increase as temperatures increase, the piezomagnetic properties of amorphous composite films are the best at 40 Celsius degree. Within frequency band (30kHz-6000MHz) of electromagnetic wave, the films have good characteristics of shielding high-frequency and broad-frequency electromagnetic waves. The shielding properties are improved significantly as the content of powder or the thickness of materials increases. Shielding effectiveness above 15dB is obtained at certain experimental parameters.
Keywords
amorphous state; boron alloys; copper alloys; electromagnetic shielding; internal stresses; iron alloys; magnetomechanical effects; nanocomposites; nanofabrication; nanoparticles; niobium alloys; pressing; rubber; silicon alloys; thin films; amorphous powder; broad-frequency electromagnetic wave shielding; butyl rubber; composite films; frequency 30 kHz to 6000 MHz; high-frequency electromagnetic wave shielding; microstress; nanocrystalline powders; piezomagnetic properties; pressing; temperature 20 degC to 50 degC; Amorphous materials; Electromagnetic scattering; Frequency; Iron; Niobium; Powders; Pressing; Rubber; Semiconductor films; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424766
Filename
5424766
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