Synthesis and characterization of semiconductive In2O3 hollow particles

A novel and facile synthesis route has been developed to prepare semiconductive In₂O₃ particles with hollow interiors and microporous shell structures. From the etching profile of XPS analysis, ¿implantation¿ of indium species into the polymeric templates occurs in C₂Cl₄ solvent, forming particles with a core-shell structure. Upon calcinations to 600°C, polycrystalline In₂O₃ hollow particles with a narrow particle-size distribution and a non-aggregating character are formed. Specific surface area and pore structure on the shells of the hollow particles can be tailored to a significant extent by changing process variables such as precursor concentration. Structure and electric properties of the In₂O₃ hollow particles are examined by TEM/SEM, BET, UV-vis., and FT-IR.