DocumentCode
1664865
Title
Study of InGaN/GaN/InGaN multi-layer barrier in GaN-based light emitting diode
Author
Liwen Cheng ; Chunyan Xu ; Yang Sheng ; Weida Hu ; Wei Lu ; Zhanming Li
Author_Institution
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
fYear
2011
Firstpage
31
Lastpage
32
Abstract
A GaN-based light emitting diode (LED) with InGaN/GaN/InGaN multi-layer barrier (MLB) is studied. Simulation results show that GaN-based LED with MLB has better performance than conventional GaN-based LED with only one GaN barrier, which we found is due to enhancement of hole injection into quantum well and decrease of electron current leakage.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; optical multilayers; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN-InGaN; electron current leakage; hole injection; light emitting diode; multilayer barrier; quantum well; Charge carrier processes; Electronic mail; Gallium nitride; Light emitting diodes; Power generation; Radiative recombination; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2011 11th International Conference on
Conference_Location
Rome
ISSN
2158-3234
Print_ISBN
978-1-61284-876-1
Type
conf
DOI
10.1109/NUSOD.2011.6041121
Filename
6041121
Link To Document