Integrated simulator for single photon avalanche diodes

We present a new mono-dimensional device simulator optimized for the behavioral inspection and design of single-photon avalanche diodes (SPAD). The particular operating conditions in which these pn junctions are used, reverse biased above the breakdown voltage, lead to a non-univocal I-V characteristic and a non-stationary behavior, which is difficult to simulate with commercial products. For this reason we developed a complete integrated simulation environment for investigating SPAD performances. At present we have included simulations of electric field, breakdown, Dark Count Rate and afterpulsing, while the modularity of the simulator can ensure great expandability.