• DocumentCode
    1666506
  • Title

    Unwanted microwave oscillator frequency shifts induced by bipolar junction transistor die attach

  • Author

    Folk, T. ; Mallette, L. ; Ulmer, J.

  • Author_Institution
    Hughes Space & Commun., Los Angeles, CA, USA
  • Volume
    4
  • fYear
    1996
  • Firstpage
    479
  • Abstract
    Two space qualified frequency synthesizers were found to exhibit noise bursting during testing, following X-ray examination, in July 1994. An inter-company, cross-functional investigation team was formed to determine root cause because of the potential impact on flight hardware. The source of the problem was isolated to poor bonding of a bipolar junction transistor (BJT). The root cause of the noise bursting phenomena was not positively identified, but there is strong correlation to the die attachment process of the BJT in the oscillator of the VCO and a soft correlation with the BJT environment
  • Keywords
    X-ray applications; bipolar transistor circuits; burst noise; microwave oscillators; radiation hardening (electronics); semiconductor device noise; semiconductor device packaging; semiconductor device testing; space vehicle electronics; BJT environment; VCO; X-ray examination; bipolar junction transistor; bonding; device level test; die attach; die attachment process; microwave oscillator frequency shifts; noise bursting; nominal noise; soft correlation; space qualified frequency synthesizers; testing; Cables; Frequency synthesizers; Microassembly; Microwave oscillators; Microwave transistors; Noise level; Performance evaluation; Spectral analysis; System testing; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Aerospace Applications Conference, 1996. Proceedings., 1996 IEEE
  • Conference_Location
    Aspen, CO
  • Print_ISBN
    0-7803-3196-6
  • Type

    conf

  • DOI
    10.1109/AERO.1996.499682
  • Filename
    499682