DocumentCode
1667007
Title
Compound semiconductor nanowires for next generation optoelectronics
Author
Jagadsih, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2010
Firstpage
106
Lastpage
106
Abstract
GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemical vapor deposition. Growth mechanism, microstructure and optical properties of these nanowires will be discussed in this talk.
Keywords
III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; nanowires; optical properties; optoelectronic devices; GaAs; InAs; InP; compound semiconductor nanowire; epitaxial growth; metalorganic chemical vapor deposition; nanowire growth mechanism; nanowire microstructure; nanowire optical property; next generation optoelectronics; Crystals; Gallium arsenide; Indium phosphide; Morphology; Nanowires; Photoluminescence;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2010 IEEE
Conference_Location
Playa del Carmen
Print_ISBN
978-1-4244-3730-6
Electronic_ISBN
978-1-4244-3731-3
Type
conf
DOI
10.1109/PHOSST.2010.5553657
Filename
5553657
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