The influences of rapid-thermal annealing on the characteristics of Sr0.6Ba0.4Nb206 thin film

Author

Yang, Cheng-Fu ; Diao, Chien-Chen ; Wu, Chia-Ching ; Leu, Ching-Chich

Author_Institution

Dept. of Chem. & Mater. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan

fYear

2010

Firstpage

1274

Lastpage

1275

Abstract

Strontium barium niobate, Sr_0.6Ba_0.4Nb₂O₆ (SBN) ceramic is used as the targets to deposit the SBN thin films. By careful control of sputtering parameters, the optimal sputtering parameters for depositing SBN thin films are the substrate temperature of 500Â°C, chamber pressure of 10 mTorr, RF power of 120W, and oxygen concentration of 40%. The rapid-thermal annealing (RTA) process is used to anneal the SBN thin films at different temperatures and their physical and electrical characteristics are investigated. The influences of RTA-treated temperatures on the crystalline characteristics, micrographs, leakage current density-electrical field (J-E) curves, and capacitance-voltage (C-V) curves are developed.

Keywords

barium compounds; ferroelectric ceramics; ferroelectric thin films; leakage currents; niobium compounds; rapid thermal annealing; strontium compounds; RTA-treated temperatures; SBN ceramic; SBN thin films; Sr_0.6Ba_0.4Nb₂O₆; capacitance-voltage curves; crystalline characteristics; electrical characteristics; leakage current density-electrical field curves; micrographs; physical characteristics; power 120 W; pressure 10 mtorr; rapid-thermal annealing; sputtering parameters; strontium barium niobate; temperature 500 C; Annealing; Barium; Capacitance-voltage characteristics; Ceramics; Niobium compounds; Optimal control; Pressure control; Sputtering; Strontium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424912

Filename

5424912