Surface modifications of organic buffer layer /inorganic dielectric in Zinc oxide transistors

We report on the fabrication of top-contact ZnO field-effect transistors (FETs) with organic buffer dielectric on the inorganic dielectric. In flexible electronics, most inorganic semiconductors and dielectrics, including amorphous silicon, may be incompatible with temperature-sensitive plastic substrates. While organic semiconductors and organic dielectrics may seem well suited to this particular application niche. Therefore, in this paper, we show that ZnO-FETs using proven in organic semiconductor such as ZnO with organic buffer dielectric is a promising candidate of the flexible displays for flexible electronics, because ZnO-FETs can be fabricated at CPVA buffer dielectric layer with mobility (> 0.34 cm²/Vs) and on/off current ratio (> 4 × 10⁶) at below 120°C.