DocumentCode
1667694
Title
Preparation and application of sub-micron lead zirconium titanate surface acoustic wave biosensors
Author
Lu, Hsin-Chun ; Lai, Wai-Kit ; Young, Hsin-Chieh
Author_Institution
Dept. of Chem. & Mater. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear
2010
Firstpage
1240
Lastpage
1241
Abstract
This paper presents the preparation of piezoelectric lead zirconium titanate (PZT) thick films and the fabrication of PZT surface acoustic waves (SAW) devices with sub-micron IDT electrodes by the micro-powder-sol-gel method. The utilization of these PZT SAW devices as biosensors to detect human IgG is also reported. From the experimental results, it was found that PZT thick films prepared from the precursor coating slurry solutions made from PZT micro-powders calcined at 550°C for 90 minutes have best electrical properties (¿r=1889.355, Pr=29.3 ¿C/cm2, Ec=32.4 kV/cm, d31=-418.580 pC/N, d33=916.681 pC/N at 1 kHz) after being annealed at 600°C for 1 hour. The central frequency and the insertion loss of PZT SAW devices prepared from PZT films mentioned above are 2.30 GHz and 16.14 dB, respectively. When used for the actual detection of human IgG, the detection of limit of PZT SAW biosensors is 10-9 g/ml and is better than that of the QCM (10-7 g/ml) under the same immobilization and sensing conditions.
Keywords
annealing; biosensors; calcination; piezoelectric thin films; sol-gel processing; surface acoustic wave sensors; zirconium compounds; PZT SAW biosensors; PZT surface acoustic waves devices; annealing; calcination; human IgG; immobilization; insertion loss; micro-powder-sol-gel method; piezoelectric lead zirconium titanate thick films; precursor coating slurry solutions; sub-micron IDT electrodes; sub-micron lead zirconium titanate surface acoustic wave biosensors; temperature 550 degC; temperature 600 degC; time 1 hour; time 90 min; Acoustic waves; Biosensors; Fabrication; Humans; Piezoelectric devices; Surface acoustic wave devices; Surface acoustic waves; Thick films; Titanium compounds; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424928
Filename
5424928
Link To Document