• DocumentCode
    1668188
  • Title

    Development of a 10 kW high power density three-phase ac-dc-ac converter using SiC devices

  • Author

    Lai, Rixin ; Wang, Fred ; Ning, Puqi ; Zhang, Di ; Jiang, Dong ; Burgos, Rolando ; Boroyevich, Dushan ; Karimi, Kamiar J. ; Immanuel, Vikram D.

  • Author_Institution
    Center for Power Electron. Syst. (CPES), Virginia Tech, Blacksburg, VA, USA
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    12
  • Abstract
    This paper presents the development and experimental performance of a 10 kW high power density three-phase ac-dc-ac converter. The converter consists of a Vienna-type rectifier front-end and a two-level voltage source inverter (VSI). In order to reduce the switching loss and achieve a high operating junction temperature, a SiC JFET and SiC Schottky diode are utilized. Design considerations for the phase-leg units, gate drivers, integrated input filter-combining EMI and boost inductor stages-and the system protection are described in full detail. Experiments are carried out under different operating conditions, and the results obtained verify the performance and feasibility of the proposed converter system.
  • Keywords
    AC-DC power convertors; DC-AC power convertors; JFET circuits; Schottky diodes; silicon compounds; wide band gap semiconductors; JFET circuits; Schottky diode; SiC; Vienna-type rectifier; gate drivers; phase-leg units; three-phase ac-dc-ac converter; voltage source inverter; Analog-digital conversion; Electromagnetic interference; Inductors; Inverters; Rectifiers; Schottky diodes; Silicon carbide; Switching loss; Temperature; Voltage; High power density; SiC devices; ac-dc-ac converter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
  • Conference_Location
    Barcelona
  • Print_ISBN
    978-1-4244-4432-8
  • Electronic_ISBN
    978-90-75815-13-9
  • Type

    conf

  • Filename
    5279036