The structured potential in the vacuum gap between two closely spaced semiconductors (dielectrics)

The structured component DeltaV_st(roarr) of the full potential formed between two dielectrics (semiconductors) in a small vacuum interval is calculated theoretically. The analytical expressions for DeltaV_st(roarr) in the vacuum gap is calculated, using the Green´s functions of the nonlocal Poisson equation. It is shown that the structured component DeltaV_st(roarr) in the case of the small separated interval L~0.3-2 nm determines the lateral changing of the potential barrier height in the vacuum gap, which can result in the origin of the ordered long-period lattice of the areas of the decrease (increase) of the full potential inside a vacuum interspace. This fact can lead to the origin of the cold field emission canals, which are stimulated by the microscopic structure of the anode surface. If the cathode-anode vacuum distance is increasing (L4rarrinfin) the origin of the emission centers at the cathode surface is connected only with the microscopic structure of its surface