Explaining the reduced floating body effects in narrow channel SOI MOSFETs

Author

Pretet, J. ; Subba, N. ; Ioannou, D. ; Cristoloveanu, S. ; Maszara, W. ; Raynaud, C.

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

fYear

2001

Firstpage

25

Lastpage

26

Abstract

We focus on the floating body effects (FBEs) in narrow channel SOI MOSFETs such as saturation subthreshold swing, breakdown voltage and single transistor latch-up. We find that all improve as the channel width decreases and examine the mechanisms causing this improvement. We demonstrate experimently and by simulation, that the reduced FBEs in narrow channel devices are caused by dopant outdiffusion and lifetime reduction along the channel edges.

Keywords

MOSFET; carrier lifetime; diffusion; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; silicon-on-insulator; FBEs; breakdown voltage; channel edges; channel width effect; dopant outdiffusion; lifetime reduction; narrow channel SOI MOSFETs; reduced floating body effects; saturation subthreshold swing; single transistor latch-up; Breakdown voltage; Charge carrier lifetime; Condition monitoring; Doping profiles; Isolation technology; Linear predictive coding; MOSFETs; Numerical simulation; Threshold voltage; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.957967

Filename

957967