Lateral field emitter with thin-film Au emissive layer

Author

Gorecka-Drzazga, A. ; Dziuban, J.A. ; Gorol, M.

Author_Institution

Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland

fYear

2005

Firstpage

208

Lastpage

209

Abstract

Lateral field emitters have been investigated for years as an alternative source of free electrons. Lateral construction seems to be easier from fabrication point of view, but the micrometer size cathode-anode/gate distance depends mainly on nano-lithographic procedures. In this work we have shown silicon/silicon dioxide/gold lateral emitters, made by controlled under etching of sandwich layer, possessing surprising good emissive properties. Turn-on voltage was of about 6 V in vacuum and 8 V in an air, the threshold field of 0.25 V/μm and the maximal emission current of about 5 μA for 15 V.

Keywords

MIS structures; anodes; cathodes; elemental semiconductors; etching; field emitter arrays; gold; metallic thin films; nanolithography; semiconductor thin films; silicon; silicon compounds; 15 V; 5 muA; 6 V; 8 V; Si-SiO₂-Au; anodes; cathodes; emission current; lateral field emitter; nanolithography; sandwich layer etching; thin film emissive layer; threshold field; turn-on voltage; Chromium; Etching; Fabrication; Gold; Photonics; Plasma measurements; Silicon compounds; Threshold voltage; Transistors; Ultrafast electronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619559

Filename

1619559