Exploitation of volume inversion in optimal DG MOSFET design

Author

Ge, L. ; Fossum, J.G.

Author_Institution

Univ. of Florida, Gainesville, FL, USA

fYear

2001

Firstpage

29

Lastpage

30

Abstract

Based on the variational approach, an analytical quantum-effects model for symmetrical DG MOSFETs of arbitrary Si-film thickness has been developed and used to give a design criterion for the exploitation of volume inversion for enhanced carrier mobility. Reference to Monte Carlo simulations of the carrier transport supported the modeling. The work focused on symmetrical DG devices, but the insight gained can be useful for near-symmetrical devices as well.

Keywords

MOSFET; Monte Carlo methods; carrier mobility; elemental semiconductors; quantum interference phenomena; semiconductor device models; silicon; variational techniques; Monte Carlo simulations; Si; Si-film thickness; analytical quantum-effects model; design criterion; double-gate; enhanced carrier mobility; near-symmetrical devices; optimal DG MOSFET design; symmetrical DG MOSFETs; symmetrical DG devices; variational approach; volume inversion; Effective mass; Eigenvalues and eigenfunctions; MOSFET circuits; Optical films; Predictive models; Quantization; Scalability; Schrodinger equation; Semiconductor films; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.957969

Filename

957969