Characterization of SOI wafers by temporal decay measurement of condensate luminescence

In this study, we focused on the temporal decay of the luminescence due to highly dense carriers in the superficial SOI film. We measured the dependence of the decay on excitation intensity and time-resolved spectra, and found that the decay under low excitation condition depended on the surface/interface condition and method of fabrication. These results allow us to view the present method as a powerful tool for characterization of SOI wafers.