Partial trench isolated body-tied (PTIBT) structure for SOI applications

Silicon on insulator (SOI) technology has gained interest to provide improvements in speed and power consumption over bulk technologies. However, floating body effects of SOI devices such as kinks, parasitic bipolar action and hysteretic propagation delay have retarded its application. To eliminate these undesirable effects several body-tied structures have been suggested, but all generally suffer from adverse costs such as performance degradation and/or process complexity. We propose a novel body-tied structure, adding simple partial trench isolation, which effectively suppresses the floating body effects without performance degradation.