• DocumentCode
    1669182
  • Title

    Vertical epitaxial Co5Ge7 nanowires and nanobelts arrays on a thin graphitic layer for flexible FED

  • Author

    Yoon, Hana ; Seo, Kwanyong ; Bagkar, Nitin ; In, Juneho ; Park, Jeunghee ; Kim, Jaemyung ; Kim, Bongsoo

  • fYear
    2010
  • Firstpage
    1155
  • Lastpage
    1156
  • Abstract
    We have successfully synthesized vertically aligned single-crystalline Co5Ge7 NWs on a curved thin graphite layer as well as on a very thin graphite layer. Vertical Co5Ge7 nanobelts are also synthesized on a graphite substrate. The vertical Co5Ge7 nanobelt arrays or Co5Ge7 NW arrays have been selectively grown on a graphite substrate depending on the experimental conditions. As grown Co5Ge7 NW arrays satisfy most requirements for the ideal emitters of FEDs, such as sharp tips, superb electrical conductivity, thermal and chemical stability, and vertical alignment to the substrate. The vertical Co5Ge7 NW arrays showed very efficient FE properties comparable to those of CNTs because of their optimum morphology. The NW emitter arrays on the curved graphite layer could be used for future flexible FEDs. Since the crystal structure of thin HOPG is close to that of graphene layers, our results could be extended to the epitaxial growth of Co5Ge7 NWs and nanobelts on graphene.
  • Keywords
    cobalt compounds; electrical conductivity; electron field emission; epitaxial growth; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor quantum wires; thermal stability; C; Co5Ge7; chemical stability; crystal structure; curved thin graphite layer; electrical conductivity; epitaxial growth; field emission; flexible FEDs; morphology; thermal stability; vertical epitaxial nanowires; vertical nanobelt arrays; vertically aligned single-crystalline nanowires; Chemicals; Fluid flow; Iron; Lattices; Morphology; Nanostructures; Nanowires; Scanning electron microscopy; Substrates; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424984
  • Filename
    5424984