DocumentCode
1669323
Title
High voltage semiconductor technologies
Author
Rahimo, Munaf ; Klaka, Sven
Author_Institution
Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
fYear
2009
Firstpage
1
Lastpage
10
Abstract
High voltage semiconductor devices continue to play a major role in modern megawatt power systems especially in the fields of traction, transmission and distribution (T&D) and industrial applications. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness, better controllability and reliable behavior under normal and fault conditions. This paper will focus on the main two high voltage turn-off device concepts, namely the IGCT and IGBT. Recent device developments and future trends will be discussed to provide the power electronics community of what can be expected in the coming years from the power device performance viewpoint.
Keywords
insulated gate bipolar transistors; power semiconductor devices; IGBT; IGCT; high voltage semiconductor devices; industrial applications; modern megawatt power systems; power devices; power electronics community; traction applications; transmission and distribution applications; Controllability; Electrical equipment industry; Industrial power systems; Insulated gate bipolar transistors; Performance loss; Power electronics; Power system reliability; Robust control; Semiconductor devices; Voltage; Design; Device Application; Power Semiconductor Device;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location
Barcelona
Print_ISBN
978-1-4244-4432-8
Electronic_ISBN
978-90-75815-13-9
Type
conf
Filename
5279073
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