• DocumentCode
    1669323
  • Title

    High voltage semiconductor technologies

  • Author

    Rahimo, Munaf ; Klaka, Sven

  • Author_Institution
    Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    High voltage semiconductor devices continue to play a major role in modern megawatt power systems especially in the fields of traction, transmission and distribution (T&D) and industrial applications. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness, better controllability and reliable behavior under normal and fault conditions. This paper will focus on the main two high voltage turn-off device concepts, namely the IGCT and IGBT. Recent device developments and future trends will be discussed to provide the power electronics community of what can be expected in the coming years from the power device performance viewpoint.
  • Keywords
    insulated gate bipolar transistors; power semiconductor devices; IGBT; IGCT; high voltage semiconductor devices; industrial applications; modern megawatt power systems; power devices; power electronics community; traction applications; transmission and distribution applications; Controllability; Electrical equipment industry; Industrial power systems; Insulated gate bipolar transistors; Performance loss; Power electronics; Power system reliability; Robust control; Semiconductor devices; Voltage; Design; Device Application; Power Semiconductor Device;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
  • Conference_Location
    Barcelona
  • Print_ISBN
    978-1-4244-4432-8
  • Electronic_ISBN
    978-90-75815-13-9
  • Type

    conf

  • Filename
    5279073