Quasi-planar FinFETs with selectively grown germanium raised source/drain

Double-gate MOSFETs are attractive because they can be scaled to the shortest gate length for a given gate oxide thickness. Recent studies suggest that double gate devices can meet performance requirements down to 10 nm gate length. The FinFET was introduced and is a promising double-gate structure. A simplified, quasi-planar version of the FinFET exhibiting, excellent performance was presented. Short channel effects can be suppressed in the FinFET provided that the gate length is at least 1.4 times the fin thickness. The source/drain (S/D) thin fin extension regions are highly resistive so it is essential to minimize the length of the S/D thin fin extensions. In this work, we combine the simplicity of the new FinFET process flow with a selective Ge growth technique to present the first raised S/D quasi-planar FinFET devices.