A compact model for multi-island single electron transistors

Author

Chi, Yaqing ; Zhong, Haiqin ; Zhang, Chao ; Fang, Liang

Author_Institution

Nat. Key Lab. for Parallel & Distrib. Process., Nat. Univ. of Defense Technol., Changsha, China

fYear

2010

Firstpage

1132

Lastpage

1133

Abstract

Multi-island single electron transistor (MISET) is a kind of single electron transistor (SET), which has advantages of the room temperature operating. A novel semi-empirical compact model for MISET is proposed. The new approach combines the orthodox theory of single electron tunneling for single Coulomb island and a novel empirical analysis for a chain of Coulomb islands. The model is verified by the Monte-Carlo method in SIMON simulator, and is much faster than the traditional multi-island SET simulator, which has the advantages for the large scale multi-island SET circuit simulation.

Keywords

Monte Carlo methods; circuit simulation; single electron transistors; tunnelling; MISET; Monte Carlo method; SIMON simulator; circuit simulation; multiisland single electron transistors; orthodox theory; semiempirical compact model; single Coulomb island; single electron tunneling; temperature 293 K to 298 K; Character generation; Circuit simulation; Concurrent computing; Distributed processing; Electrodes; Large-scale systems; Single electron transistors; Temperature; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424995

Filename

5424995