• DocumentCode
    1669546
  • Title

    90nm low leakage SoC design techniques for wireless applications

  • Author

    Royannez, Philippe ; Mair, Hugh ; Dahan, Franck ; Wagner, Mike ; Streeter, Mark ; Bouetel, Laurent ; Blasquez, Joel ; Clasen, Holger ; Semino, Giancarlo ; Dong, Julie ; Scott, David ; Pitts, Bob ; Raibaut, Claudine ; Ko, Uming

  • Author_Institution
    Texas Instrum., Villeneuve Loubet, France
  • fYear
    2005
  • Firstpage
    138
  • Abstract
    The new generation of multimedia-application processors requires a drastic leakage reduction to bring the standby current to 50μA. An efficient set of leakage reduction techniques, including power gating, memory retention, voltage scaling, and dual Vt, is employed on a 50M transistor, 80mm2 IC, fabricated in a 90nm CMOS technology, resulting in a 40× leakage reduction.
  • Keywords
    CMOS integrated circuits; leakage currents; mobile computing; multimedia communication; system-on-chip; 50 muA; 90 nm; CMOS technology; leakage reduction; low leakage SoC design; memory retention; multimedia-application processors; power gating; voltage scaling; wireless applications; Clocks; Diodes; Energy management; Graphics; Hardware; Instruments; Random access memory; Surges; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1493907
  • Filename
    1493907
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1669546