• DocumentCode
    1669571
  • Title

    Comparison of gate structures for short-channel SOI MOSFETs

  • Author

    Park, J.-T. ; Colinge, C.A. ; Colinge, J.-P.

  • Author_Institution
    Dept. of Electron. Eng., Inchon Univ., South Korea
  • fYear
    2001
  • Firstpage
    115
  • Lastpage
    116
  • Abstract
    This paper compares the merits of different "multiple-gate" SOI MOSFET structures in terms of short-channel effects and current drive. It is found that, in general, the higher the number of gates, the better the device characteristics. A new gate structure, called the "Pi gate" is introduced. This gate structures offers properties close to those of a quadruple-gate device.
  • Keywords
    MOSFET; silicon-on-insulator; Si; current drive; gate structures comparison; multiple-gate structures; quadruple-gate device; short-channel SOI MOSFET; CMOS process; Degradation; Drives; Electrodes; MOSFETs; Manufacturing processes; Shape; Silicon on insulator technology; Transconductance; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2001 IEEE International
  • Conference_Location
    Durango, CO, USA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-6739-1
  • Type

    conf

  • DOI
    10.1109/SOIC.2001.958013
  • Filename
    958013
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1669571