DocumentCode
1669712
Title
Design of an integrated III-V semiconductor single-plasmon source
Author
Gan, Choon How ; Hugonin, Jean-Paul ; Lalanne, Philippe
Author_Institution
Lab. Charles Fabry de l´´Inst. d´´Opt., Univ. Paris-Sud, Palaiseau, France
fYear
2012
Firstpage
1
Lastpage
2
Abstract
We propose a single-plasmon source integrated on a semiconductor III-V platform. Analytic and numerical calculations show that an ultra-small resonating cavity can boost the spontaneous decay rate by 20-fold and the source efficiency by 70%.
Keywords
III-V semiconductors; numerical analysis; optical resonators; plasmonics; polaritons; quantum optics; surface plasmons; analytic calculations; integrated III-V semiconductor single-plasmon source; numerical calculations; semiconductor III-V platform; ultra-small resonating cavity; Cavity resonators; Couplings; Optical coupling; Optical waveguides; Photonics; Plasmons; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326269
Link To Document