Measuring complex for thin films degradation investigations under various external actions

Author

Pykhtin, N.V. ; Borovsky, A.L. ; Shugurov, A.P.

Author_Institution

Inst. of Strength Phys. & Mater. Sci., Tomsk Polytech. Univ., Russia

fYear

2002

Firstpage

55

Lastpage

57

Abstract

The given paper is dedicated to develop the measurement complex for the thin films approval and to investigate their degradation in passing current of high density. The investigations performed on the electrical resistance of Ag thin-film conductors have shown that a combination of optical and scanning tunnel microscopy allows one to track the macroscopic samples destruction and to investigate the changing of the surface morphology on different scale levels. The results obtained can be used in developing new materials for microelectronics.

Keywords

electrical resistivity; metallic thin films; optical microscopy; scanning tunnelling microscopy; silver; Ag; Ag conductor; current density; electrical resistance; measurement system; optical microscopy; scanning tunnel microscopy; surface morphology; thin film degradation; Conducting materials; Conductive films; Current measurement; Degradation; Density measurement; Electric resistance; Electrical resistance measurement; Optical films; Optical microscopy; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Modern Technique and Technologies, 2002. MTT 2002. Proceedings of the 8th International Scientific and Practical Conference of Students, Post-graduates and Young Scientists

Print_ISBN

0-7803-7373-1

Type

conf

DOI

10.1109/SPCMTT.2002.1213723

Filename

1213723