• DocumentCode
    1670915
  • Title

    Process-temperature-frequency adaptive voltage scaled SRAM system for power reduction

  • Author

    Zhu, JiaFeng ; Bai, Na ; Wu, Jianhui

  • Author_Institution
    Sch. of Electron. Sci. & Eng., SouthEast Univ., Nanjing, China
  • fYear
    2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    High-performance Low-power static random access memories (SRAMs) are required in many battery-powered applications. This paper presents a process temperature frequency (PTF) adaptive voltage scale technique to reduce power. In the self-adaption phase, the optimal supply voltage is chose automatically according to PTF. So a significant reduction in power consumption can be achieved. Moreover, SRAMs can be accessed normally when they are in the self-adaption phase. Simulation results illustrate that saved power is more than 60% when supply voltage is changed from 1.2V to 0.7V. The optimal supply voltage is dependent on different process corners, temperatures and operating frequencies.
  • Keywords
    SRAM chips; low-power electronics; SRAM system; battery-powered applications; high-performance low-power static random access memories; optimal supply voltage; power consumption reduction; process temperature frequency adaptive voltage scale technique; self-adaption phase; voltage 1.2 V to 0.7 V; Adaptive systems; Clocks; Delay; Detectors; Discharges; Power demand; Random access memory; Process variability; SRAM; Yield;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2011 International Conference on
  • Conference_Location
    Hammamet
  • Print_ISBN
    978-1-4577-2207-3
  • Type

    conf

  • DOI
    10.1109/ICM.2011.6177409
  • Filename
    6177409