• DocumentCode
    1671543
  • Title

    A single-chip Si-LDMOS power amplifier for GSM

  • Author

    Shimizu, Toshihiko ; Matsunaga, Yoshikuni ; Sakurai, Satoshi ; Yoshida, Isao ; Hotta, Masao

  • Author_Institution
    Renesas Technol., Gunma, Japan
  • fYear
    2005
  • Firstpage
    310
  • Abstract
    A 0.23 μm single-chip Si-LDMOS high-power amplifier with matching circuits and all control blocks for quad-band GSM handset phones is implemented in 2.1×2.45 mm2. The IC achieves a maximum PAE of 54% at 36 dBm output power and input VSWR of less than 1.6 over the GSM850/900 bands.
  • Keywords
    MOS analogue integrated circuits; UHF power amplifiers; cellular radio; power MOSFET; power integrated circuits; 0.23 micron; 2.1 mm; 2.45 mm; 850 to 900 MHz; amplifier matching circuits; cellular phones; high-power amplifier; quad-band GSM handset phones; single-chip LDMOS power amplifier; Circuits; Costs; GSM; Interference; MOSFETs; Manufacturing processes; Power amplifiers; Radio frequency; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1493993
  • Filename
    1493993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1671543