DocumentCode
1672036
Title
A 72 Gb/s 231-1 PRBS generator in SiGe BiCMOS technology
Author
Dickson, Timothy ; Laskin, Ekaterina ; Khalid, Imran ; Beerkens, Rudy ; Xie, Jingqiong ; Karajica, Boris ; Voinigescu, Sorina
Author_Institution
Toronto Univ., Ont., Canada
fYear
2005
Firstpage
342
Abstract
A 231-1 72 Gb/s PRBS generator is reported in a 0.13 μm SiGe BiCMOS technology with 150 GHz-fT HBTs. Variable delays are introduced along the 36 GHz clock path to increase timing margins. A true BiCMOS logic family using NMOS FETs in the clock path is employed throughout the circuit, which dissipates 9.28 W from a 3.3 V supply to provide a single-ended output swing of 300 mV at 72 Gb/s.
Keywords
BiCMOS logic circuits; binary sequences; clocks; delays; integrated circuit design; integrated circuit measurement; logic design; low-power electronics; random sequences; signal generators; timing; 0.13 micron; 150 GHz; 3.3 V; 36 GHz; 72 Gbit/s; 9.28 W; HBT; PRBS generator; SiGe; SiGe BiCMOS technology; clock path NMOSFET; power dissipation; single-ended output swing; timing margins; true BiCMOS logic family; variable delays; BiCMOS integrated circuits; Circuit testing; Clocks; Flip-flops; Germanium silicon alloys; Inductors; Logic; Silicon germanium; Test pattern generators; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
0-7803-8904-2
Type
conf
DOI
10.1109/ISSCC.2005.1494009
Filename
1494009
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