• DocumentCode
    1672129
  • Title

    High efficiency GaN-based light emitting diodes with embedded air voids/SiO2 nanomasks

  • Author

    Chiu, Ching-Hsueh ; Lin, Chien-Chung ; Han, Hau-Vei ; Lin, Da-Wei ; Chen, Yan-Hao ; Liu, Che-Yu ; Lan, Yu-Pin ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung

  • Author_Institution
    Dept. of Photonics, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We fabricated high efficiency LEDs with embedded micro-scale air voids and SiO2 nanomask exhibit smaller reverse-bias current and great enhancement of the light output (65% at 20mA) compared with the conventional LEDs.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; nanophotonics; optical fabrication; wide band gap semiconductors; GaN; LED; SiO2; current 20 mA; embedded air voids nanomasks; light emitting diodes; reverse-bias current; Educational institutions; Epitaxial layers; Gallium nitride; Light emitting diodes; Photonics; Scanning electron microscopy; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6326361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1672129