Magnetic and optical properties of Mn doped ZnO nanocrystalline films

Author

Xia, Chuan-hui ; Hu, Chen-guo ; Tian, Yong-shu ; Wan, Buyong ; He, Xiaoshan ; Xu, Jing

Author_Institution

Dept. of Appl. Phys., Chongqing Univ., Chongqing, China

fYear

2010

Firstpage

982

Lastpage

983

Abstract

We have investigated the properties of Mn-doped ZnO nanocrystalline films grown on zinc foil by hydrothermal method. The microstructure, optical and magnetic properties of these films have been characterized by SEM, XRD, XPS and UV-vis spectrum. The XPS spectra show the doping manganese exists as Mn²⁺. From UV-vis spectra, the shift in band gap and greater reflectivity can be observed due to Mn doping in ZnO. The magnetic property measurement of the Mn-doped ZnO exhibits a room temperature ferromagnetic characteristic with a saturation magnetization (Ms) of 0.3902 Ã— 10^-3 emu/cm² and a coercive field of 47 Oe.

Keywords

II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; coercive force; crystal growth from solution; crystal microstructure; ferromagnetic materials; magnetisation; manganese; nanostructured materials; optical constants; scanning electron microscopy; semiconductor doping; semiconductor thin films; semimagnetic semiconductors; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; SEM; UV-vis spectrum; X-ray diffraction; X-ray photoelectron microscopy; XPS; XRD; Zn; ZnO:Mn; band gap; coercive field; hydrothermal method; magnetic properties; manganese doping; microstructure; nanocrystalline films; optical properties; room temperature ferromagnetic characteristic; saturation magnetization; scanning electron microscopy; zinc foil; Doping; Magnetic films; Magnetic properties; Manganese; Microstructure; Optical films; Optical saturation; Saturation magnetization; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425092

Filename

5425092