State-of-the-art 60 GHz, 3.6 k-ohm transimpedance amplifier for 40 Gb/s and beyond

Author

Kobayashi, Kevin W.

Author_Institution

SIRENZA MICRODEVICES, Torrance, CA, USA

fYear

2003

Firstpage

55

Lastpage

58

Abstract

A 3.6 kΩ InP HBT transimpedance amplifier (TIA) has been demonstrated with a bandwidth of 60 GHz. Gain flatness of ±2 dB and DC power of 271 mW has also been obtained. This TIA benchmarks the best gain-bandwidth product (GBP) of 1.9 THz, the highest transimpedance-bandwidth product (TZ-BWP) of 216 Ω-THz, and the highest TZ-BWP per DC power efficiency of +797 Ω-GHz/mW obtained for a 40 Gb/s transimpedance amplifier. These results are discussed in context with prior state-of-the-art 40 Gb/s TIAs implemented with various technologies and circuit topologies. 40 Gb/s photo-receiver requirements, TIA technology and topology trades, and future directions are reviewed.

Keywords

III-V semiconductors; bipolar MMIC; heterojunction bipolar transistors; indium compounds; millimetre wave amplifiers; network topology; optical receivers; 271 mW; 3.6 kohm; 40 Gbit/s; 60 GHz; DC power efficiency; GBP; InP; InP HBT transimpedance amplifier; TIA technology; TZ-BWP; circuit topologies; gain flatness; gain-bandwidth product; photo-receiver performance; transimpedance-bandwidth product; Bandwidth; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Optical amplifiers; Optical noise; Optical receivers; Optical sensors; Semiconductor device noise; Semiconductor optical amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213892

Filename

1213892