Total dose γ-ray irradiation characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers

Author

Zhu, Shingyang ; Li, J.H. ; Lin, Chenglu ; Gao, J.X. ; Yan, L.L.

Author_Institution

Inst. of Metall., Acad. Sinica, Shanghai, China

fYear

1995

Firstpage

263

Lastpage

265

Abstract

The total dose response characteristics of CMOS inverters fabricated on SIMOX and BESOI wafers were measured as a function of accumulative dose and bias conditions during irradiation. The stretch-out technique was used to separate the threshold-voltage shifts of PMOS and NMOS into shifts due to interface traps and trapped-oxide charge. The leakage currents of NMOS/SIMOX increased quickly after irradiation because of the parasitic back-channel MOS structure. While the BESOI devices suffered no significant back-channel effect due to thick top silicon layers

Keywords

CMOS logic circuits; SIMOX; gamma-ray effects; logic gates; silicon-on-insulator; γ-ray irradiation; BESOI wafers; CMOS inverters; NMOS; PMOS; SIMOX wafers; interface traps; leakage currents; parasitic back-channel MOS structure; stretch-out technique; threshold-voltage shifts; total dose response; trapped-oxide charge; Annealing; Argon; Circuits; Conductivity; Implants; Inverters; MOS devices; Oxidation; Silicon; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.500081

Filename

500081