Microcrystallinity of undoped amorphous silicon films and its effects on the transfer characteristics of thin film transistors

Author

Liang, Chia-wen ; Chiang, Wen-chuan ; Feng, Ming-Shiann

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1995

Firstpage

275

Lastpage

277

Abstract

The microcrystallinity of the hydrogenated amorphous silicon films deposited by the usual radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) method and its dependence on the chamber pressure are discussed. Films deposited at the critical pressure posses the highest crystalline volume fraction and the smallest grain size. An ion-bombardment assisted model is proposed to explain the experimental results. Concerning the applications of microcrystalline films to thin film transistors (TFTs), the subthreshold swing and the field effect mobility are also studied

Keywords

amorphous semiconductors; elemental semiconductors; grain size; plasma CVD coatings; semiconductor thin films; silicon; thin film transistors; Si:H; crystalline volume; field effect mobility; grain size; ion-bombardment assisted model; microcrystallinity; radio-frequency plasma-enhanced chemical vapor deposition; subthreshold swing; thin film transistors; transfer characteristics; undoped hydrogenated amorphous silicon films; Amorphous materials; Amorphous silicon; Crystallization; Etching; Grain boundaries; Hydrogen; Laboratories; Plasma applications; Semiconductor films; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.500085

Filename

500085