Development of Radiation Hardened by Design(RHBD) primitive gates using 0.18μm CMOS technology

Author

Trivedi, Rakesh ; Devashrayee, N.M. ; Mehta, Usha S. ; Desai, N.M. ; Patel, Himanshu

Author_Institution

ISRO-RESPOND Programme, Nirma Univ., Ahmedabad, India

fYear

2015

Firstpage

1

Lastpage

2

Abstract

Radiation Hardened By Design (RHBD) combinational circuits/primitive gates using 0.18um CMOS Technology is developed for Space application with help of Cogenda TCAD software suite. The proposed combinational cells are investigated for radiation simulation using three dimensional (3D) device structure. Single Event Transient (SET) caused by proton, α particle and heavy ions like C, Ar and Kr is observed on developed Cells and SET pulse width is measured on primitive gates. The proposed C element based radiation hardened Inverter is simulated using α, Ar and proton energetic particle. Proposed NOR and NAND gates are simulated under the radiation of proton, α and Kr and Single Event Transient Pulse Width is measured.

Keywords

combinational circuits; logic design; logic gates; radiation hardening (electronics); CMOS technology; combinational circuits; radiation hardened by design primitive gates; single event transient; size 0.18 mum; three dimensional device structure; Argon; Inverters; Logic gates; Mathematical model; Protons; Radiation hardening (electronics); Solid modeling; 0.18um CMOS Technology; Heavy Ion; Radiation Hardened by Design(RHBD); Single Event Transient (SET);

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design and Test (VDAT), 2015 19th International Symposium on

Conference_Location

Ahmedabad

Print_ISBN

978-1-4799-1742-6

Type

conf

DOI

10.1109/ISVDAT.2015.7208046

Filename

7208046