Simulation of Surface State Effects in the Transient Response of 4H-SiC MESFETs

Author

Xiaochuan, Deng ; Bo, Zhang ; Zhaoji, Li ; ZhuangLiang, Chen

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu

fYear

2007

Firstpage

1244

Lastpage

1247

Abstract

Two-dimensional small-signal ac and transient analyses of surface trap effects in 4H-SiC MESFETs have been performed in this paper. The mechanism of acceptor-type traps on transconductance and drain current changes has been discussed. The simulation results show that transconductance exhibits negative frequency dispersion behavior, which is caused by the charge exchange via the surface states existing between the gate-source and gate-drain terminals. The current degradation behavior is also observed due to acceptor-type traps, acting as electron traps, in MESFET devices. A detailed study about ionization and energy level of traps reveals conclusive results in the devices analyzed.

Keywords

Schottky gate field effect transistors; charge exchange; silicon compounds; wide band gap semiconductors; MESFET; SiC; acceptor-type traps; charge exchange; degradation behavior; frequency dispersion; surface trap effects; transconductance-drain current; transient response; Analytical models; Doping; Electron traps; Energy states; Frequency; MESFETs; Silicon carbide; Surface fitting; Transconductance; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2007. ICCCAS 2007. International Conference on

Conference_Location

Kokura

Print_ISBN

978-1-4244-1473-4

Type

conf

DOI

10.1109/ICCCAS.2007.4348272

Filename

4348272