Effect of annealing on the gate effective work-function modulation for the Al/TiN/SiO2/P-Si structure

Author

Wang, Xiaorong ; Li, Bingzong ; Ru, Guoping ; Qu, Xinping ; Jiang, Yulong

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2010

Firstpage

902

Lastpage

903

Abstract

In our work, we investigate the effective work function (EWF) modulation of the metal gate about the Al/TiN/SiO₂/p-Si structure through the thermal annealing. Through different annealing temperature and different annealing time, we find the EWF of gate electrode shifts from 4.73 eV (suitable for PMOS) to 4.18 eV (suitable for NMOS). We think the diffusion of Al to the interface and the variation of the thin TiN film characteristic are responsible for the decrease of the EWF.

Keywords

MIS structures; aluminium; annealing; diffusion; electrodes; elemental semiconductors; silicon; silicon compounds; thin films; titanium compounds; work function; Al-TiN-SiO₂-Si; NMOS; PMOS; annealing; diffusion; electron volt energy 4.73 eV to 4.18 eV; gate effective work-function modulation; gate electrode; metal gate; thin film; Capacitors; Dielectric materials; Electrodes; High K dielectric materials; MOS devices; Plasma temperature; Rapid thermal annealing; Resists; Sputtering; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425139

Filename

5425139