The high voltage/high power FET (HiVP)

Author

Ezzeddine, Amin K. ; Huang, Ha C.

Author_Institution

AMCOM Commun. Inc, Clarksburg, MD, USA

fYear

2003

Firstpage

215

Lastpage

218

Abstract

A new device configuration is presented: the High-Voltage/High-Power device (HiVP). This original configuration can dramatically improve the power and decrease the complexity of designing power amplifiers, leading to low cost and higher power. The HiVP uses a new concept, never achieved before, to simultaneously bias a semiconductor device at high voltage while maintaining an optimum output matching impedance close to 50 Ohms. The concept could be applied to many device technologies such as the GaAs MESFET, HEMT, and the Si MOSFET, to combine the power of several devices to achieve higher power output over broader bandwidth.

Keywords

UHF field effect transistors; field effect MMIC; gallium arsenide; microwave field effect transistors; microwave power transistors; power HEMT; power MESFET; power MOSFET; silicon; GaAs; GaAs HEMT; GaAs MESFET; Si; Si MOSFET; device configuration; high voltage/high power FET; optimum output matching impedance; power MMIC process; power amplifiers; semiconductor device biasing; Costs; FETs; Gallium arsenide; HEMTs; High power amplifiers; Impedance matching; MESFETs; MOSFET circuits; Semiconductor devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213929

Filename

1213929