A 1.4 mA & 3 mW, SiGe90, BiFET low noise amplifier for wireless portable applications

Author

Ma, Pingxi ; Racanelli, Marco ; Zheng, Jie ; Knight, Marion

Author_Institution

Jazz Semicond. Inc., Newport Beach, CA, USA

fYear

2003

Firstpage

237

Lastpage

240

Abstract

A 3 mW silicon-based LNA has been built using a novel cascoded Bipolar/mosFET (BiFET) configuration in SiGe90, a SiGe BiCMOS process optimized for next-generation wireless applications. Ultra-low current (1.4 mA) and power consumption (3 mW) is achieved with a 16 dB power gain, a 1.6 dB minimum noise figure and -6.5 dBm IIP3 operating in the PCS band. By using this cascoded configuration, the BiFET LNA can operate up to 5 V and reach a high power gain of over 20 dB. This LNA has been packaged and measured through an input & output 50 ohm PC board match. To the best of our knowledge, this is the lowest current silicon-based LNA reported to date which maintains good PCS band performance.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; integrated circuit noise; mobile radio; radiofrequency amplifiers; radiofrequency integrated circuits; semiconductor materials; 1.4 mA; 1.6 dB; 16 dB; 3 mW; 5 V; PCS band; SiGe; SiGe BiCMOS process; SiGe90 BiFET low noise amplifier; cascoded configuration; wireless portable communication; BiCMOS integrated circuits; Energy consumption; Germanium silicon alloys; Linearity; Low-noise amplifiers; MOS devices; MOSFET circuits; Noise figure; Personal communication networks; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213934

Filename

1213934