Investigation magnetism state of undoped surface of 4H-SiC

Author

Yu, Lin ; Liu, Donghong ; Dai, Ying ; Huang, Baibiao

Author_Institution

Sch. of Phys., Shandong Univ., Jinan, China

fYear

2010

Firstpage

880

Lastpage

881

Abstract

In this paper, we have investigated the magnetic properties of non-doped 4H-SiC surface by using density functional theory (DFT) calculations. For polar pure surface (0001) direction , there will be spin-polarized, and C-terminated or Si-terminated surface have no spin-polarized. We also check the kinds of defect intrinsic properties. This study of defect states suggests the existence of defect-induced or mediated collective magnetism in these nonmagnetic sp systems.

Keywords

density functional theory; electron spin polarisation; silicon compounds; wide band gap semiconductors; C-terminated surface; DFT calculations; Si-terminated surface; SiC; collective magnetism; defect intrinsic properties; defect states; density functional theory; magnetic properties; magnetism state; nonmagnetic sp systems; polar pure surface direction; spin-polarized surface; undoped surface; Crystalline materials; Electric breakdown; Gallium nitride; Magnetic materials; Magnetic properties; Magnetic semiconductors; Physics; Silicon carbide; Thermal conductivity; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5425149

Filename

5425149