20 GHz high power high efficiency HEMT module

Author

Chen, C.H. ; Yen, H.C. ; Tan, K. ; Callejo, L. ; Onak, G. ; Streit, D.C. ; Liu, P.H. ; Schellenberg, J.M.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1993

Firstpage

1377

Abstract

The development of a high-gain, high-power, high-efficiency K-band MIC (microwave integrated circuit) power module using four 1.6-mm pseudomorphic InGaAs HEMT (high electron mobility transistor) devices is reported. Power output of 3.2 W with 10 dB gain and 35% power-added efficiency at 3-dB compression was obtained at 20 GHz. The 1-dB bandwidth is 1.7 GHz. The greatly improved power gain and efficiency offer several design advantages in terms of higher SSPA (solid-state power amplifier) efficiency, fewer stages and modules required, and the attendant improved reliability for onboard application at 20 GHz.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; power amplifiers; 1.7 GHz; 10 dB; 20 GHz; 3.2 W; 35 percent; HEMT module; K-band MIC; SSPA; onboard application; power module; power-added efficiency; pseudomorphic InGaAs; reliability; solid-state power amplifier; Bandwidth; Gain; HEMTs; Indium gallium arsenide; K-band; MODFETs; Microwave devices; Microwave integrated circuits; Multichip modules; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.276741

Filename

276741