A highly efficient noise suppression technique for Si-based RFIC

Author

Chen, Tung-Sheng ; Lee, Chih-Yuan ; Kao, Chin-Hsin ; Deng, Der-Sheng ; Wu, Chung-Hsun ; Huang, Guo-Wei ; Chen, Kun-Ming

Author_Institution

Semicond. Lab., Chung Cheng Inst. of Technol., Taoyuan, Taiwan

fYear

2003

Firstpage

343

Lastpage

346

Abstract

A highly efficient CMOS process technique for suppressing the transmission of high-frequency noise induced by fast-switching MOS gates and/or spiral inductors through silicon substrate has been attained. The isolated n⁺-pocket structure designed in this work has proven to be very effective in guarding vulnerable devices from remnant high-frequency noise roaming in the substrate. The protecting structures shall become a decisive measure in future success of Si-based RFIC applications.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit noise; interference suppression; radiofrequency integrated circuits; silicon; CMOS process technique; HF noise suppression; Si; Si substrate; Si-based RFIC; fast-switching MOS gates; high-frequency noise; highly efficient noise suppression technique; isolated n⁺-pocket structure; protecting structures; spiral inductors; CMOS technology; Frequency; Inductors; Isolation technology; Protection; Radiofrequency integrated circuits; Semiconductor device noise; Silicon; Spirals; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213958

Filename

1213958