A Si/SiGe BiCMOS mixer with 3rd-order nonlinearity cancellation for WCDMA applications (student paper)

Author

Sheng, Liwei ; Larson, Lawrence E.

Author_Institution

Center for Wireless Commun., California Univ., San Diego, La Jolla, CA, USA

fYear

2003

Firstpage

417

Lastpage

420

Abstract

This paper presents a general analysis of the 3rd-order nonlinearity of a differential common-emitter (CE) radio frequency (RF) amplifier and an improved way to cancel the 3rd-order nonlinearity. A SiGe BiCMOS mixer is designed, based on the 3rd-order cancellation scheme. The mixer achieves +6 dBm IIP3, 15 dB gain and 7.7 dB DSB NF with only 2.2 mA current at 2.1 GHz. This performance exceeds that of previously reported active mixers in this frequency range.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF mixers; code division multiple access; elemental semiconductors; integrated circuit design; integrated circuit measurement; integrated circuit noise; semiconductor materials; silicon; 15 dB; 2.1 GHz; 2.2 mA; 7.7 dB; CE RF amplifiers; IIP3; Si-SiGe; Si/SiGe BiCMOS mixer frequency range; UHF amplifiers; UHF mixer current consumption; WCDMA; active mixer gain/DSB NF; differential common-emitter radio frequency amplifiers; mixer third-order nonlinearity cancellation; BiCMOS integrated circuits; Capacitance; Differential amplifiers; Germanium silicon alloys; Linearity; Multiaccess communication; Radio frequency; Silicon germanium; Transfer functions; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE

ISSN

1529-2517

Print_ISBN

0-7803-7694-3

Type

conf

DOI

10.1109/RFIC.2003.1213975

Filename

1213975